PART |
Description |
Maker |
UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
UPD44164365F5-E50-EQ1 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 1800万位条DDRII SRAM的分离I / O 2字爆发运
|
NEC, Corp.
|
UPD44324082F5-E33-EQ2 UPD44324362F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION 36M条位SRAM2条DDRII字爆发运
|
NEC Corp. NEC, Corp.
|
R1Q4A3618BBG-33R R1Q4A3636BBG-33R R1Q4A3618BBG-40R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
R1QLA3636CBG R1QLA3618CBG |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
R1QLA3636CBB |
36-Mbit DDRII SRAM 2-word Burst 36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M4V16169DRT-15 M5M4V16169DTP |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米(100万字6位)6K的缓存内存(1024字由16位)的SRAM
|
Mitsubishi Electric, Corp.
|
LC3564B LC3564BM LC3564BS LC3564BT LC3564BT-10 LC3 |
x8 SRAM 64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K (8192-word ? 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins 64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins 64K (8192-word 8-bit) SRAM with OE / CE1 / and CE2 Control Pins 64K (8192-word ′ 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K (8192-word 8-bit) SRAM with OE, CE1, and CE2 Control Pins 64K的(8192字?8位)与光电,CE1上SRAM和控制引脚铈
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd. Sanyo Electric Co., Ltd.
|
UPD4416008 UPD4416008G5-A15-9JF UPD4416008G5-A17-9 |
2M X 8 STANDARD SRAM, 17 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
|
NEC
|
K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|